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APT80GA90LD40
900V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA90LD40 poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
900 145 80 239 30 625 239A @ 900V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 47A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 350 1500 100
Unit
V
VGE =VCE , IC = 1mA
A
6 - 2009 052-6348 Rev C
VGS = 30V
nA
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on) tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 47A TJ = 150C, RG = 4.74, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 47A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 47A RG = 4.74 TJ = +125C 239 18 29
APT80GA90LD40
Min Typ
4560 411 62 200 30 72 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
149 85 1652 1389 18 31 192 128 2813 2082
ns
J
ns
J
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-264 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
0.2 .61
Unit
C/W g in*lbf
-
6.1
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6348 Rev C
6 - 2009
Typical Performance Curves
100
V
GE
APT80GA90LD40
350 300 250 200 8V 7V 6V 5V 150 100 50 0 15V 13V 10V 9V
= 15V
IC, COLLECTOR CURRENT (A)
80
TJ= 55C
TJ= 150C
60
40 TJ= 125C 20
0
0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
TJ= 25C
250
16 14 12 10 8 6 4 2 0
0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 47A C T = 25C
J
IC, COLLECTOR CURRENT (A)
200
VCE = 180V
150 TJ= 125C 100 TJ= 25C 50 TJ= -55C 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE = 450V VCE = 720V
0
20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 3 2 1 0
6 5 4 3 2 1 0
IC = 94A IC = 47A IC = 23.5A
IC = 94A IC = 47A
IC = 23.5A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
6
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
25
150 125 100 75 50 25 0 6 - 2009 25 052-6348 Rev C
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A) -50 -25
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
Typical Performance Curves
24 td(ON), TURN-ON DELAY TIME (ns) 22 20 18 16 14 12 10 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 600V TJ = 25C, or 125C RG = 4.7 L = 100H
APT80GA90LD40
300 250 200
VGE =15V,TJ=125C
150 100 50 0
VCE = 600V RG = 4.7 L = 100H VGE =15V,TJ=25C
20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
RG = 4.7, L = 100H, VCE = 600V
0
100
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 175
80
150 tr, FALL TIME (ns) 125 100 75 50 25 100
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
60
40
TJ = 25C, VGE = 15V
20
TJ = 25 or 125C,VGE = 15V
0
0
20
40
60
80
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 7000 Eon2, TURN ON ENERGY LOSS (J) 6000 5000 4000 3000 2000 1000 0 EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R =4.7
G
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 6000 5000 4000 3000 2000 1000 0
TJ = 25C
V = 600V CE V = +15V GE R = 4.7
G
0
RG = 4.7, L = 100H, VCE = 600V
TJ = 125C
TJ = 125C
TJ = 25C
20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 12000 SWITCHING ENERGY LOSSES (J) 10000 8000 6000 4000 2000 0
Eon2,47A Eoff,47A Eon2,23.5A Eoff,23.5A Eon2,94A
V = 600V CE V = +15V GE T = 125C
J
0
0 20 40 60 80 100 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 7000 SWITCHING ENERGY LOSSES (J) 6000 5000 4000 3000 2000 1000 0
Eon2,47A Eoff,47A Eon2,23.5A Eoff,23.5A
V = 600V CE V = +15V GE R = 4.7
G
Eon294A Eoff,94A
Eoff,94A
052-6348 Rev C
6 - 2009
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A)
APT80GA90LD40
1000
C, CAPACITANCE (pF)
100
1000
10
Coes 100 Cres 10
1
0
200
400
600
800
0.1
1
10
100
1000
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7 0.5
Note:
0.15
PDM
0.10 0.3 0.05 0.1 0 0.05 10
-5
t1 t2
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1
052-6348 Rev C
6 - 2009
APT80GA90LD40
10% Gate Voltage td(on) TJ = 125C 90% tr
V CC IC V CE
APT30DQ100
Collector Current
5%
10%
5% Collector Voltage
Switching Energy
A D.U.T.
Figure 20 Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
052-6348 Rev C
6 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 106C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified.
APT80GA90LD40 40 60 210 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 40A VF Forward Voltage IF = 80A IF = 40A, TJ = 125C
Min
Type
2.5 3.08 1.97
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.7 0.40 0.5 0.30 0.3 0.20 0.10 0 0.1 0.05 10-5 10-4
Note:
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 40A, diF/dt = -200A/s VR = 667V, TC = 25C
Min
-
Typ 25 250 415 4 315 1650 9 145 2660 29
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 667V, TC = 125C
-
IF = 40A, diF/dt = -1000A/s VR = 667V, TC = 125C
-
D = 0.9
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6348 Rev C
6 - 2009
Dynamic Characteristics
120
TJ = 25C unless otherwise specified
400 trr, REVERSE RECOVERY TIME (ns) 350 300 40A 250
APT80GA90LD40
T = 125C J V = 667V
R
IF, FORWARD CURRENT (A)
100
80A
80 TJ = 175C 60 TJ = 125C 40 TJ = 25C 20 TJ = -55C 1.0 2.0 3.0 4.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 4000 0 0
20A 200 150 100 50
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 35
T = 125C J V = 667V
0
Qrr, REVERSE RECOVERY CHARGE (nC)
3500 3000 2500
T = 125C J V = 667V
R
30 25 20 15 10
R
80A
80A
40A 2000 1500 20A 1000 500 0
40A 20A
5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 IRRM trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 70 60 50 IF(AV) (A) 40 30 20 10 0
Duty cycle = 0.5 T = 175C
J
0.6 0.4 0.2 0.0
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 160 CJ, JUNCTION CAPACITANCE (pF) 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6348 Rev C
6 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT80GA90LD40
+18V 0V
diF /dt Adjust
APT10035LLL
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-264 (L) Package Outline
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Collector
(Cathode)
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842)
2.29 (.090) 2.69 (.106)
Gate Collector (Cathode) Emitter (Anode)
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6348 Rev C
6 - 2009

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